US 12,237,392 B2
Titanium aluminum and tantalum aluminum thin films
Suvi Haukka, Helsinki (FI); Michael Givens, Phoenix, AZ (US); Eric Shero, Phoenix, AZ (US); Jerry Winkler, Gilbert, AZ (US); Petri Räisänen, Gilbert, AZ (US); Timo Asikainen, Helsinki (FI); Chiyu Zhu, Helsinki (FI); and Jaakko Anttila, Helsinki (FI)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Sep. 2, 2021, as Appl. No. 17/465,127.
Application 17/465,127 is a continuation of application No. 16/849,144, filed on Apr. 15, 2020, granted, now 11,139,383.
Application 16/849,144 is a continuation of application No. 15/997,520, filed on Jun. 4, 2018, granted, now 10,636,889, issued on Apr. 28, 2020.
Application 15/997,520 is a continuation of application No. 14/919,180, filed on Oct. 21, 2015, granted, now 10,002,936, issued on Jun. 19, 2018.
Claims priority of provisional application 62/067,802, filed on Oct. 23, 2014.
Prior Publication US 2021/0399111 A1, Dec. 23, 2021
Int. Cl. H01L 29/49 (2006.01); C23C 16/06 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/3205 (2006.01); H01L 29/51 (2006.01)
CPC H01L 29/4966 (2013.01) [C23C 16/06 (2013.01); C23C 16/34 (2013.01); C23C 16/45523 (2013.01); C23C 16/45525 (2013.01); C23C 16/45531 (2013.01); H01L 21/28088 (2013.01); H01L 21/28556 (2013.01); H01L 21/28562 (2013.01); H01L 21/32051 (2013.01); H01L 29/517 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A process for depositing a tantalum aluminum thin film comprising nitrogen on a substrate in a reaction space, the process comprising:
a plurality of deposition cycles, each deposition cycle of the plurality of deposition cycles comprising alternately and sequentially contacting the substrate with a vapor phase tantalum precursor and a vapor phase aluminum precursor,
wherein the contacting the substrate with the vapor phase aluminum precursor comprises introducing an N2 precursor into the reaction space concurrently with the vapor phase aluminum precursor so that the N2 precursor reacts on the substrate with the vapor phase aluminum precursor,
wherein the plurality of deposition cycles are conducted at a temperature of 300° C. to 400° C., and
wherein the tantalum aluminum thin film has a work function of less than 4.5 eV.