US 12,237,390 B2
Low resistance contact feature
Szu-Wei Tseng, Hsinchu (TW); Wei-Yuan Lu, Taipei (TW); Wei-Yang Lee, Taipei (TW); Chia-Pin Lin, Hsinchu County (TW); and Tzu-Wei Kao, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 20, 2022, as Appl. No. 17/750,028.
Claims priority of provisional application 63/294,102, filed on Dec. 28, 2021.
Prior Publication US 2023/0207653 A1, Jun. 29, 2023
Int. Cl. H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/42392 (2013.01) [H01L 29/0661 (2013.01); H01L 29/0669 (2013.01); H01L 29/66545 (2013.01); H01L 29/66719 (2013.01); H01L 29/785 (2013.01); H01L 2029/7858 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
receiving a workpiece comprising:
a first dummy gate structure disposed over a first active region,
a second dummy gate structure disposed over a second active region,
a first gate spacer extending along a sidewall of the first dummy gate structure and disposed at least partially over a top surface of the first active region,
a second gate spacer extending along a sidewall of the second dummy gate structure and disposed at least partially over a top surface of the second active region,
a source/drain feature comprising a lower portion disposed between the first active region and the second active region and an upper portion disposed between the first gate spacer and the second gate spacer,
treating a portion of the first gate spacer and a portion of the second gate spacer with a remote radical of hydrogen or oxygen;
removing the treated portion of the first gate spacer and the treated portion of the second gate spacer; and
after the removal, depositing a metal fill material over the source/drain feature and between the first gate spacer and the second gate spacer.