US 12,237,382 B2
Semiconductor device and power amplifier
Chieh-Chih Huang, Taoyuan (TW); Yan-Cheng Lin, Taoyuan (TW); Cheng-Kuo Lin, Taoyuan (TW); Wei-Chou Wang, Taoyuan (TW); Che-Kai Lin, Taoyuan (TW); and Jiun-De Wu, Taoyuan (TW)
Assigned to WIN SEMICONDUCTORS CORP., Taoyuan (TW)
Filed by WIN SEMICONDUCTORS CORP., Taoyuan (TW)
Filed on May 30, 2022, as Appl. No. 17/827,955.
Claims priority of provisional application 63/212,169, filed on Jun. 18, 2021.
Prior Publication US 2022/0406905 A1, Dec. 22, 2022
Int. Cl. H01L 29/417 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/45 (2006.01); H03F 3/213 (2006.01)
CPC H01L 29/4175 (2013.01) [H01L 29/7786 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/452 (2013.01); H03F 3/213 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a channel layer disposed on the substrate, wherein the channel layer is made of gallium nitride;
a barrier layer disposed on the channel layer, wherein the barrier layer is made of AlzGa1-zN;
an inserting structure inserted between the channel layer and the barrier layer, comprising:
a first inserting layer disposed on the channel layer, wherein the first inserting layer is made of AlxGa1-xN; and
a second inserting layer disposed on the first inserting layer, wherein the second inserting layer is made of AlyGa1-yN, and y is greater than x;
a gate electrode disposed on the barrier layer;
a source electrode disposed on the barrier layer at a first side of the gate electrode; and
a drain electrode disposed on the barrier layer at a second side of the gate electrode opposite to the first side of the gate electrode, wherein a spike region is formed below at least one of the source electrode and the drain electrode.