US 12,237,381 B2
Mesa contact for MOS controlled power semiconductor device and method of producing a power semiconductor device
Alim Karmous, Dresden (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Feb. 25, 2022, as Appl. No. 17/680,456.
Claims priority of application No. 102021104532.0 (DE), filed on Feb. 25, 2021.
Prior Publication US 2022/0271132 A1, Aug. 25, 2022
Int. Cl. H01L 29/417 (2006.01); H01L 27/06 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01)
CPC H01L 29/41708 (2013.01) [H01L 27/0664 (2013.01); H01L 29/1095 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A power semiconductor device, comprising:
a semiconductor body comprising a first surface and a mesa portion, wherein the mesa portion comprises a surface part of the first surface and a body region;
at least two trenches extending from the first surface into the semiconductor body along a vertical direction, wherein each of the at least two trenches comprises a trench electrode and a trench insulator insulating the trench electrode from the semiconductor body, wherein the mesa portion is laterally confined by the at least two trenches in a first vertical cross-section along a first lateral direction;
a contact plug in contact with the body region, wherein the contact plug and the trench electrode of a first trench of the at least two trenches laterally overlap at least partially in the first vertical cross-section; and
a protection structure, wherein the protection structure:
has a portion arranged within the first trench;
is arranged between the contact plug and the trench electrode of the first trench;
extends deeper along the vertical direction than both the surface part of the mesa portion and a trench cover of a second trench of the at least two trenches; and
is an electrically insulation structure or a protective device structure.