US 12,237,380 B2
Semiconductor device and method of forming the same
Chia-Ming Chang, Hsinchu (TW); Chi-Wen Liu, Hsinchu (TW); Cheng-Chien Li, Jhubei (TW); and Hsin-Chieh Huang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 17, 2023, as Appl. No. 18/353,498.
Application 16/570,160 is a division of application No. 15/817,779, filed on Nov. 20, 2017, granted, now 10,505,001, issued on Dec. 10, 2019.
Application 18/353,498 is a continuation of application No. 17/329,929, filed on May 25, 2021, granted, now 11,749,724.
Application 17/329,929 is a continuation of application No. 16/570,160, filed on Sep. 13, 2019, granted, now 11,024,718, issued on Jun. 1, 2021.
Application 15/817,779 is a continuation of application No. 15/164,824, filed on May 25, 2016, granted, now 10,032,873, issued on Jul. 24, 2018.
Claims priority of provisional application 62/218,901, filed on Sep. 15, 2015.
Prior Publication US 2023/0361181 A1, Nov. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/36 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 29/06 (2006.01); H01L 29/167 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/36 (2013.01) [H01L 21/02532 (2013.01); H01L 21/26506 (2013.01); H01L 29/0657 (2013.01); H01L 29/167 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
forming a semiconductor fin on a substrate, the semiconductor fin comprising a first material; and
embedding a second material different from the first material within the semiconductor fin, wherein the second material has a series of concentration gradients comprising in order from a top region of the second material towards a bottom of the second material a first concentration gradient, a second concentration gradient opposite the first concentration gradient, a third concentration gradient opposite the second concentration gradient, and a fourth concentration gradient opposite the third concentration gradient.