US 12,237,379 B2
Method for manufacturing nitride semiconductor device and nitride semiconductor device
Ryo Tanaka, Hino (JP); Yuki Ohuchi, Sugunami (JP); Katsunori Ueno, Matsumoto (JP); and Shinya Takashima, Hachioji (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kawasaki (JP)
Filed by FUJI ELECTRIC CO., LTD., Kawasaki (JP)
Filed on Jan. 25, 2022, as Appl. No. 17/584,043.
Claims priority of application No. 2021-36671 (JP), filed on Mar. 8, 2021; and application No. 2021-169925 (JP), filed on Oct. 15, 2021.
Prior Publication US 2022/0285504 A1, Sep. 8, 2022
Int. Cl. H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/2003 (2013.01) [H01L 21/02389 (2013.01); H01L 21/26546 (2013.01); H01L 29/66204 (2013.01); H01L 29/66522 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A method for manufacturing a nitride semiconductor device comprising:
forming a P-type well region in a nitride semiconductor layer;
forming an N-type region within the P-type well region including implanting ions of a donor element into the P-type well region at a first concentration;
implanting ions of an acceptor element at a second concentration into a first P-type region within the P-type well region and located under the N-type region so that the first P-type region is sandwiched by the N-type region and the P-type well region on both sides in a vertical direction so as to be respectively in contact with the N-type region and the P-type well region, and an uppermost surface of the first P-type region is deeper than an uppermost surface of the N-type region, wherein the first concentration is greater than or equal to the second concentration, and the second concentration is 1×1019 cm−3 or more and 1×1021 cm−3 or less; and
forming the first P-type region by subjecting the nitride semiconductor layer in which the P-type well region and the N-type region are formed and into which ions of the acceptor element are implanted to heat treatment and activating the acceptor element.