US 12,237,378 B2
Method for manufacturing SiC substrate
Masatake Nagaya, Aichi (JP); and Tadaaki Kaneko, Hyogo (JP)
Assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo (JP); and TOYOTA TSUSHO CORPORATION, Nagoya (JP)
Appl. No. 17/632,727
Filed by KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo (JP); and TOYOTA TSUSHO CORPORATION, Nagoya (JP)
PCT Filed Aug. 5, 2020, PCT No. PCT/JP2020/030067
§ 371(c)(1), (2) Date Feb. 3, 2022,
PCT Pub. No. WO2021/025077, PCT Pub. Date Feb. 11, 2021.
Claims priority of application No. 2019-144449 (JP), filed on Aug. 6, 2019.
Prior Publication US 2022/0285502 A1, Sep. 8, 2022
Int. Cl. H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 21/304 (2006.01); H01L 29/16 (2006.01)
CPC H01L 29/1608 (2013.01) [H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/304 (2013.01); H01L 21/30625 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method for producing a SiC substrate, the method comprising an etching step of arranging a SiC substrate having arithmetic average roughness (Ra) of a surface of equal to or less than 100 nm in a main container made of SiC configured to act as a SiC material, and etching the SiC substrate in an atmosphere containing Si element and C element,
wherein the etching step includes a step of arranging the SiC substrate and the main container or another SiC material so as to face each other, and performing heating so as to form a temperature gradient where the SiC substrate is high temperature side and the SiC container or another SiC material is low temperature side to etch the SiC substrate.