US 12,237,377 B2
SiC semiconductor substrate, and, production method therefor and production device therefor
Tadaaki Kaneko, Hyogo (JP); Koji Ashida, Hyogo (JP); Tomoya Ihara, Hyogo (JP); and Daichi Dojima, Hyogo (JP)
Assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo (JP); and TOYOTA TSUSHO CORPORATION, Nagoya (JP)
Appl. No. 17/291,572
Filed by KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo (JP); and TOYOTA TSUSHO CORPORATION, Nagoya (JP)
PCT Filed Nov. 5, 2019, PCT No. PCT/JP2019/043204
§ 371(c)(1), (2) Date May 5, 2021,
PCT Pub. No. WO2020/095873, PCT Pub. Date May 14, 2020.
Claims priority of application No. 2018-208476 (JP), filed on Nov. 5, 2018.
Prior Publication US 2021/0399095 A1, Dec. 23, 2021
Int. Cl. C30B 29/36 (2006.01); H01L 21/02 (2006.01); H10D 62/832 (2025.01)
CPC H10D 62/8325 (2025.01) [C30B 29/36 (2013.01); H01L 21/02263 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A manufacturing method of SiC semiconductor substrates, the method comprising:
a growth process that grows a SiC substrate while arranging steps having a height of one unit cell on a surface of the SiC substrate in a SiC—Si equilibrium vapor pressure environment.