US 12,237,370 B2
Semiconductor device with air gap and boron nitride cap and method for preparing the same
Yuan-Yuan Lin, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Oct. 23, 2023, as Appl. No. 18/382,673.
Application 18/382,673 is a division of application No. 18/218,208, filed on Jul. 5, 2023.
Application 17/537,911 is a division of application No. 16/937,347, filed on Jul. 23, 2020, granted, now 11,380,758.
Application 18/218,208 is a continuation in part of application No. 17/537,911, filed on Nov. 30, 2021, granted, now 11,742,382.
Prior Publication US 2024/0047520 A1, Feb. 8, 2024
Int. Cl. H01L 29/06 (2006.01); H10B 12/00 (2023.01)
CPC H01L 29/0649 (2013.01) [H10B 12/0335 (2023.02); H10B 12/05 (2023.02); H10B 12/31 (2023.02)] 9 Claims
OG exemplary drawing
 
1. A method for preparing a semiconductor device, comprising:
forming a first metal plug, a second metal plug, a third metal plug and a fourth metal plug over a semiconductor substrate, comprising:
forming a doped oxide layer over the semiconductor substrate, wherein the doped oxide layer has a first opening and a second opening;
conformally forming a barrier layer in the first opening and the second opening;
forming a first conductive feature in the first opening and a second conductive feature in the second opening, wherein the first conductive feature and the second conductive feature are separated from the semiconductor substrate by the barrier layer; and
removing the doped oxide layer; and
depositing a boron nitride layer over the first metal plug, the second metal plug, the third metal plug, and the fourth metal plug.