US 12,237,365 B2
Micro light-emitting display apparatus and method of manufacturing the same
Junhee Choi, Seongnam-si (KR); Kiho Kong, Suwon-si (KR); Nakhyun Kim, Yongin-si (KR); Dongho Kim, Seoul (KR); Junghun Park, Yongin-si (KR); Jinjoo Park, Yongin-si (KR); Eunsung Lee, Seoul (KR); and Joohun Han, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Aug. 25, 2023, as Appl. No. 18/456,069.
Application 18/456,069 is a continuation of application No. 17/227,981, filed on Apr. 12, 2021, granted, now 11,776,988.
Claims priority of application No. 10-2020-0128269 (KR), filed on Oct. 5, 2020.
Prior Publication US 2023/0402493 A1, Dec. 14, 2023
Int. Cl. H01L 27/15 (2006.01)
CPC H01L 27/156 (2013.01) 13 Claims
OG exemplary drawing
 
1. A method of manufacturing a micro light-emitting display apparatus, the method comprising:
forming a first active layer on a first semiconductor layer;
forming a second semiconductor layer on the first active layer;
forming a first isolation structure and a second isolation structure in the first active layers, the first isolation structure having a first width and the second isolation structure having a second width greater than the first width;
forming a first layer on the first active layer, the first isolation structure, and the second isolation structure;
exposing a first area of the second isolation structure;
forming a regrowth area by etching the exposed first area of the second isolation structure;
regrowing a semiconductor layer in the regrowth area;
planarizing the semiconductor layer to form a rod semiconductor layer;
forming a second active layer on the rod semiconductor layer; and
forming a third semiconductor layer on the second active layer.