US 12,237,359 B2
Display apparatus using semiconductor light-emitting device
Jungsub Kim, Seoul (KR); Younghak Chang, Seoul (KR); Myoungsoo Kim, Seoul (KR); and Yeonhong Jung, Seoul (KR)
Assigned to LG ELECTRONICS INC., Seoul (KR)
Appl. No. 17/257,190
Filed by LG ELECTRONICS INC., Seoul (KR)
PCT Filed Jul. 11, 2018, PCT No. PCT/KR2018/007833
§ 371(c)(1), (2) Date Dec. 30, 2020,
PCT Pub. No. WO2020/009262, PCT Pub. Date Jan. 9, 2020.
Claims priority of application No. 10-2018-0077924 (KR), filed on Jul. 4, 2018.
Prior Publication US 2021/0159269 A1, May 27, 2021
Int. Cl. H01L 27/15 (2006.01); H01L 33/02 (2010.01); H01L 33/20 (2010.01); H01L 33/38 (2010.01)
CPC H01L 27/156 (2013.01) [H01L 33/025 (2013.01); H01L 33/20 (2013.01); H01L 33/382 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A display apparatus comprising:
a plurality of semiconductor light-emitting devices,
wherein at least one semiconductor light-emitting device of the plurality of semiconductor light-emitting devices comprises:
a first conductive electrode and a second conductive electrode;
a first conductive semiconductor layer on which the first conductive electrode is disposed;
a second conductive semiconductor layer configured to overlap with the first conductive semiconductor layer, the second conductive electrode being disposed on the second conductive semiconductor layer;
an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
an intermediate layer disposed on the second conductive semiconductor layer;
a protrusion on the intermediate layer, and formed of a porous material capable of electro polishing; and
an undoped semiconductor layer disposed between the intermediate layer and the protrusion,
wherein the intermediate layer comprises:
a first layer containing second conductive impurities; and
a second layer having a higher concentration of the second conductive impurities than the first layer,
wherein the first layer and the second layer are sequentially repeated and stacked, and the first layer and the second layer have different thicknesses or different porosities, and
wherein a thickness of the second layer is within ±20% of an error range based on an integer multiple of ½ of a wavelength of light emitted from the at least one semiconductor light-emitting device.