US 12,237,355 B2
Semiconductor device and semiconductor die
Danqing Wei, Hubei (CN); and Fei Chen, Hubei (CN)
Assigned to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING CO., LTD., Hubei (CN)
Filed by WUHAN XINXIN SEMICONDUCTOR MANUFACTURING CO., LTD., Hubei (CN)
Filed on Dec. 30, 2021, as Appl. No. 17/646,659.
Claims priority of application No. 202111372025.0 (CN), filed on Nov. 18, 2021.
Prior Publication US 2023/0154961 A1, May 18, 2023
Int. Cl. H01L 27/146 (2006.01); H01L 23/00 (2006.01)
CPC H01L 27/14634 (2013.01) [H01L 24/08 (2013.01); H01L 2224/08145 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a single-photon avalanche diode (SPAD) wafer containing a plurality of SPAD dies formed thereon with respective SPAD arrays;
a time to digital converter (TDC) wafer containing a plurality of TDC dies formed thereon with respective TDC arrays; and
a logic wafer containing a plurality of logic dies formed thereon with respective peripheral logic circuits,
wherein the SPAD wafer, the TDC wafer and the logic wafer are bonded in the sequence set forth, and wherein each of the plurality of SPAD dies, each of the plurality of TDC dies and each of the plurality of logic dies are sized so as to have a same area.