| CPC H01L 27/1237 (2013.01) [H01L 27/1259 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); G09G 3/32 (2013.01); G09G 2330/028 (2013.01)] | 25 Claims |
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1. A semiconductor device, comprising:
a first high voltage semiconductor element, disposed in a substrate, comprising:
first trenches disposed in the substrate;
a first source region and a first drain region;
first drift regions having respective ones partially surround the first source region and the first drain region;
a first gate insulating layer and a first gate electrode disposed between the first drift regions; and
a first high voltage well surrounding the first drift regions; and
a second high voltage semiconductor element, disposed in the substrate, comprising:
second trenches disposed in the substrate;
a second source region and a second drain region;
second drift regions having respective ones partially surround the second source region and the second drain region;
a second gate insulating layer and a second gate electrode disposed between the second drift regions; and
a second high voltage well surrounding the second drift regions,
wherein a depth of a second trench of the second trenches is greater than a depth of a first trench of the first trenches.
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