US 12,237,334 B2
Semiconductor structure
Shih-Wei Peng, Hsinchu (TW); Wei-Cheng Lin, Taichung (TW); and Jiann-Tyng Tzeng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jul. 16, 2021, as Appl. No. 17/378,493.
Prior Publication US 2023/0020464 A1, Jan. 19, 2023
Int. Cl. H01L 27/118 (2006.01); H01L 27/02 (2006.01)
CPC H01L 27/11807 (2013.01) [H01L 27/0207 (2013.01); H01L 2027/11875 (2013.01); H01L 2027/11881 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
an active layer, having a plurality of active regions, a front side and a back side, the back side corresponding to the front side;
a plurality of metal pillars, disposed on the back side of the active layer, and physically contacting the active regions exposed on the back side of the active layer;
a plurality of first backside power lines, disposed on a first group of the metal pillars, and extending along a first axis;
a plurality of second backside power lines, disposed on a second group of the metal pillars, and extending along the first axis;
a plurality of inner metal lines, disposed aside the metal pillars, electrically connected to a third group of the metal pillars and extending along the first axis;
a plurality of spacers, disposed between the inner metal lines and a fourth group of the metal pillars; and
a plurality of isolation caps, disposed between the first backside power lines and a fifth group of the metal pillars, and disposed between the second backside power lines and a sixth group of the metal pillars.