US 12,237,323 B2
Semiconductor device having improved electrostatic discharge protection
Sheng-Fu Hsu, Hsinchu (TW); Ta-Yuan Kung, New Taipei (TW); Chen-Liang Chu, Hsin-Chu (TW); and Chih-Chung Tsai, Hsin-Chu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Jan. 5, 2024, as Appl. No. 18/405,159.
Application 17/845,159 is a division of application No. 17/004,396, filed on Aug. 27, 2020, granted, now 11,393,809, issued on Jul. 19, 2022.
Application 18/405,159 is a continuation of application No. 17/845,159, filed on Jun. 21, 2022, granted, now 11,916,060.
Claims priority of provisional application 62/949,575, filed on Dec. 18, 2019.
Prior Publication US 2024/0153943 A1, May 9, 2024
Int. Cl. H01L 29/00 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01)
CPC H01L 27/0251 (2013.01) [H01L 21/28052 (2013.01); H01L 21/28097 (2013.01); H01L 21/28518 (2013.01); H01L 29/0649 (2013.01); H01L 29/4933 (2013.01); H01L 29/66659 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a source region in a substrate;
a drain region in the substrate and comprising a plurality of first drain segments and one or more second drain segments, wherein the plurality of first drain segments share a first doping type and are spaced from each other by the one or more second drain segments;
a gate stack over the substrate, between the source region and the drain region; and
a silicide structure overlying a distal drain segment of the plurality of first drain segments that is farthest from the gate stack amongst the plurality of first drain segments, wherein the silicide structure is farther from the gate stack than the distal drain segment and has a width less than a width of the distal drain segment.