US 12,237,322 B2
Semiconductor device having fin structure
Shun-Li Chen, Tainan (TW); Chung-Te Lin, Tainan (TW); Hui-Zhong Zhuang, Kaohsiung (TW); Pin-Dai Sue, Tainan (TW); and Jung-Chan Yang, Taoyuan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jan. 16, 2024, as Appl. No. 18/413,078.
Application 17/116,915 is a division of application No. 16/181,727, filed on Nov. 6, 2018, granted, now 10,867,986, issued on Dec. 15, 2020.
Application 18/413,078 is a continuation of application No. 17/116,915, filed on Dec. 9, 2020, granted, now 11,908,851.
Claims priority of provisional application 62/590,469, filed on Nov. 24, 2017.
Prior Publication US 2024/0153940 A1, May 9, 2024
Int. Cl. H01L 29/78 (2006.01); H01L 21/285 (2006.01); H01L 21/8238 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01)
CPC H01L 27/0207 (2013.01) [H01L 21/28525 (2013.01); H01L 21/28568 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 23/522 (2013.01); H01L 23/5286 (2013.01); H01L 23/53209 (2013.01); H01L 23/53271 (2013.01); H01L 27/0924 (2013.01); H01L 29/41791 (2013.01); H01L 29/42356 (2013.01); H01L 29/42372 (2013.01); H01L 29/42376 (2013.01); H01L 29/4238 (2013.01); H01L 29/66795 (2013.01); H01L 29/7855 (2013.01); H01L 29/7856 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a fin structure, disposed on a substrate;
a first conductive line, wrapping a first portion of the fin structure;
a second conductive line, attached on a second portion of the fin structure, the second portion being different from the first portion;
an isolation region, formed on the substrate and having a first side attached on one end of the second conductive line; and
a first conductive rail, disposed in a same layer as the first conductive line and the second conductive line on the substrate, the first conductive rail being attached on one end of the first conductive line and a second side of the isolation region opposite to the first side to be laterally contacted by the first conductive line and the isolation region.