| CPC H01L 25/0652 (2013.01) [H01L 25/18 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06562 (2013.01); H01L 2225/06575 (2013.01); H01L 2225/06586 (2013.01)] | 20 Claims | 

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               1. A semiconductor package, comprising: 
            a package substrate; 
                a processor chip mounted on the package substrate; 
                a first stack structure on the package substrate, the first stack structure including a number M of memory chips stacked on the processor chip, M being the number of all memory chips in the first stack structure; and 
                a second stack structure on the package substrate and spaced apart from the processor chip, the second stack structure including a number N of memory chips stacked on the package substrate, N being the number of all memory chips in the second stack structure, 
                wherein a number Q of channels that electrically connect the memory chips of the second stack structure with the processor chip and a number P of channels electrically connect the memory chips of the first stack structure with the processor chip, 
                wherein M, N, P, and Q are positive non-zero integers, 
                wherein the number N of all memory chips in the second stack structure is greater than the number M of all memory chips in the first stack structure, 
                wherein the semiconductor package contains a total number of memory chips that equals M+N, 
                wherein the processor chip is mounted on the package substrate in a flip chip bonding manner, and 
                wherein chip pads of the processor chip are electrically connected to the package substrate by conductive bumps. 
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