US 12,237,299 B2
Systems and methods for direct bonding in semiconductor die manufacturing
Chia Jung Hsu, Taichung (TW); and Eiichi Nakano, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Oct. 17, 2023, as Appl. No. 18/380,863.
Application 18/380,863 is a continuation of application No. 17/379,568, filed on Jul. 19, 2021, granted, now 11,817,420.
Prior Publication US 2024/0063172 A1, Feb. 22, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 24/80 (2013.01) [H01L 24/05 (2013.01); H01L 25/0657 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/8012 (2013.01); H01L 2224/80948 (2013.01); H01L 2225/06541 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for bonding a first semiconductor die to a second semiconductor die to form a stacked semiconductor device, the method comprising:
stacking a first surface of a first semiconductor die having a first plurality of bond sites on a second surface of a second semiconductor die having a second plurality of bond sites;
annealing the stacked semiconductor device to bond individual pairs of bond sites from the first plurality of bond sites and the second plurality of bond sites, wherein the annealing leaves a void between the first surface and the second surface, and wherein a metal material extends at least partially along an inner surface of the void; and
exposing the stacked semiconductor device to radiation to excite a chemical constituent in the void.