	US 12,237,298 B1
	Cooperative bonding method for a bonding head of a wire bonding machine and a wire bonding machine
Jian Gao, Guangzhou (CN); Guocong Chen, Guangzhou (CN); Lanyu Zhang, Guangzhou (CN); and Haixiang Deng, Guangzhou (CN)
Assigned to GUANGDONG UNIVERSITY OF TECHNOLOGY, Guangzhou (CN)
Filed by GUANGDONG UNIVERSITY OF TECHNOLOGY, Guangzhou (CN)
Filed on Oct. 12, 2024, as Appl. No. 18/914,153.
Claims priority of application No. 202311416198.7 (CN), filed on Oct. 30, 2023.
Int. Cl. H01L 23/00 (2006.01); G05B 19/4155 (2006.01)

CPC H01L 24/78 (2013.01) [G05B 19/4155 (2013.01); H01L 2224/78901 (2013.01)]

3 Claims

1. A cooperative bonding method for a bonding head of a wire bonding machine, wherein, being applied to a wire bonding machine that comprises a bonding head and a micro-motion stage, and the micro-motion stage comprises a vertical lifting mechanism mounted on a base, with a loading platform provided at a top of the vertical lifting mechanism to support a target processing chip; and

wherein, the cooperative bonding method for the bonding head of the wire bonding machine, comprising:

setting an initial height value of the vertical lifting mechanism to be a difference value between a height value of a chip bonding position and a distance from a pad to a surface of the loading platform; and

upon receiving a bonding instruction, controlling the bonding head to perform a positioning operation on the target processing chip, during the positioning operation of the bonding head on the target processing chip, before the bonding head completes overshoot, controlling the vertical lifting mechanism to descend a preset distance, wherein the preset distance is defined as:

μ≥|He^−ζw^_n^t^_psin(w_dt_p+ψ)|+(H_m+h−H);

wherein, μ is the preset distance for the descending of the vertical lifting mechanism; and His a travel distance for an acceleration motion of the bonding head, with the acceleration motion defined as a movement with acceleration greater than 100 g; and ζ is a damping ratio of the bonding head; and w_nis a free vibration frequency of the bonding head; and w_dis a damped vibration frequency of the bonding head; and t_pis a time at which a maximum amplitude of the bonding head's overshoot occurs; and H_mis a height of the loading platform before the vertical lifting mechanism descends; and h is a distance from the pad to a surface of the loading platform; and ψ is an initial phase angle of a vibration of the bonding head; and

during the positioning operation of the bonding head on the target processing chip, when the bonding head has completed the acceleration motion and the overshoot, controlling the vertical lifting mechanism to rise back to a initial height position; and during a process of the vertical lifting mechanism rises back to the initial height position, the pad of the chip does not exceed a residual vibration curve of the bonding head.