| CPC H01L 24/75 (2013.01) [B23K 1/0056 (2013.01); B23K 26/032 (2013.01); B23K 26/034 (2013.01); B23K 26/0626 (2013.01); B23K 26/18 (2013.01); B23K 26/324 (2013.01); B23K 37/0435 (2013.01); H01L 21/56 (2013.01); H01L 21/67 (2013.01); H01L 21/67276 (2013.01); H01S 3/101 (2013.01); B23K 26/0869 (2013.01); B23K 2101/40 (2018.08); B23K 2103/56 (2018.08); H01L 2224/75263 (2013.01); H01L 2224/75704 (2013.01); H01L 2224/75901 (2013.01)] | 15 Claims |

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1. A system for laser bonding of flip chip comprising:
a supply unit configured to supply a substrate, on which a plurality of semiconductor chips to be bonded to an upper surface of the substrate are arranged;
a fixing unit configured to receive the substrate from the supply unit and fix a lower surface of the substrate;
a laser unit comprising a laser head for bonding the semiconductor chips to the substrate by irradiating a laser beam to the substrate fixed to the fixing unit and a laser transporting portion transporting the laser head;
a mask comprising a transmitting portion configured to transmit through a laser beam irradiated from the laser head of the laser unit and transmit through infrared rays including a wavelength band from about 3 μm or more to about 9 μm or less;
a mask holding unit configured to hold the mask above the fixing unit;
a pressurizing unit configured to lift one of the mask holding unit and the fixing unit relative to the other such that the transmitting portion of the mask pressurizes a plurality of semiconductor chips of the substrate fixed to the fixing unit;
a discharging unit configured to receive the substrate from the fixing unit and discharge the substrate;
an infrared camera configured to capture an image of the semiconductor chips to which a laser beam is irradiated by the laser head of the laser unit; and
a controller configured to control operation of the supply unit, the fixing unit, and the discharging unit, and control operation of the laser head of the laser unit by using a value measured by the infrared camera.
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