an interconnect structure disposed over a semiconductor substrate;

contact pads disposed on the interconnect structure;

a dielectric structure disposed on the interconnect structure and covering the contact pads;

bonding connectors covered by the dielectric structure and landing on the contact pads, top surfaces of the bonding connectors being substantially coplanar with a top surface of the dielectric structure, and the bonding connectors being electrically coupled to the interconnect structure through the contact pads; and

a dummy feature covered by the dielectric structure and laterally interposed between adjacent two of the bonding connectors, wherein a maximum height of the dummy feature is greater than a maximum height of one of the adjacent two of the bonding connectors.