US 12,237,282 B2
Semiconductor device and method of forming the same
Wei-Huan Fu, Tainan (TW); Ying-Tsung Chen, Tainan (TW); Jiun-Jie Huang, Kaohsiung (TW); Wen-Han Hung, Tainan (TW); and Jen-Pan Wang, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 6, 2022, as Appl. No. 17/738,016.
Prior Publication US 2023/0361062 A1, Nov. 9, 2023
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/05 (2013.01) [H01L 24/03 (2013.01); H01L 24/13 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/03466 (2013.01); H01L 2224/03622 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05018 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05157 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05559 (2013.01); H01L 2224/05562 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05681 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/05686 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/014 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/0496 (2013.01); H01L 2924/20107 (2013.01); H01L 2924/20108 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, comprising:
forming a device layer over a substrate, wherein the device layer comprises a top metal feature;
forming a first passivation layer over the device layer;
patterning the first passivation layer to form a first opening that exposes the top metal feature;
performing a trimming process to the first passivation layer to round a top corner of the first opening;
forming a first metal pad in the first opening and in contact with the top metal feature;
forming a second passivation layer over the first metal pad;
patterning the second passivation layer to form a second opening that exposes the first metal pad; and
forming a second metal pad in the second opening and in contact with the first metal pad.