US 12,237,277 B2
Package structure and methods of manufacturing the same
Shu-Shen Yeh, Taoyuan (TW); Po-Yao Lin, Hsinchu County (TW); Chin-Hua Wang, New Taipei (TW); Chia-Kuei Hsu, Hsinchu (TW); and Shin-Puu Jeng, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 24, 2023, as Appl. No. 18/357,184.
Application 18/357,184 is a continuation of application No. 17/363,030, filed on Jun. 30, 2021, granted, now 11,798,897.
Claims priority of provisional application 63/166,252, filed on Mar. 26, 2021.
Prior Publication US 2023/0369246 A1, Nov. 16, 2023
Int. Cl. H01L 23/16 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 23/538 (2006.01); H01L 23/58 (2006.01)
CPC H01L 23/562 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/486 (2013.01); H01L 21/4871 (2013.01); H01L 21/563 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/16 (2013.01); H01L 23/3128 (2013.01); H01L 23/3135 (2013.01); H01L 23/3675 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 23/5385 (2013.01); H01L 23/5386 (2013.01); H01L 23/585 (2013.01); H01L 2221/68372 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package structure, comprising:
a circuit substrate, having a device region and a frame-shaped peripheral region around to the device region, wherein the circuit substrate comprises:
a dielectric portion; and
a conductive portion disposed in the dielectric portion, wherein a first ratio of a total volume of the conductive portion of the circuit substrate within the device region to a total volume of the dielectric portion and the conductive portion of the circuit substrate within the device region is less than a second ratio of a total volume of the conductive portion of the circuit substrate within the frame-shaped peripheral region to a total volume of the dielectric portion and the conductive portion of the circuit substrate within the frame-shaped peripheral region, wherein the second ratio is greater than or substantially equal to 80%, wherein in a cross section of the circuit substrate, the frame-shaped peripheral region has an inner sidewall and an outer sidewall opposite to the inner sidewall, the inner sidewall is in direct contact with a sidewall of the device region, and the outer sidewall is a sidewall of the circuit substrate;
a metallic supporting structure, disposed in and electrically isolated from the circuit substrate within the frame-shaped peripheral region;
a semiconductor device, disposed over the circuit substrate within the device region, wherein the semiconductor device is electrically coupled to the circuit substrate; and
a ring structure, disposed over the circuit substrate within the frame-shaped peripheral region.