US 12,237,274 B2
Semiconductor structures comprising a via structure with a first protection structure and a second protection structure
Zongzheng Lu, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Anhui (CN)
Filed on Mar. 14, 2022, as Appl. No. 17/693,819.
Application 17/693,819 is a continuation of application No. PCT/CN2021/117281, filed on Sep. 8, 2021.
Claims priority of application No. 202110821475.7 (CN), filed on Jul. 20, 2021.
Prior Publication US 2023/0028636 A1, Jan. 26, 2023
Int. Cl. H01L 23/552 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01)
CPC H01L 23/552 (2013.01) [H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/5286 (2013.01); H01L 24/05 (2013.01); H01L 2224/0557 (2013.01); H01L 2924/3025 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
at least one ground layer and at least one power supply layer arranged in a preset direction, and a via structure extending in the preset direction; and
a first protection structure and a second protection structure, wherein the first protection structure and the second protection structure are sequentially disposed around a sidewall of the via structure in a direction surrounding the sidewall of the via structure, and are spaced apart from each other, wherein a first spacing is formed between the first protection structure and the via structure, at least partial region of the first protection structure is electrically connected with the at least one ground layer, a second spacing is formed between at least partial region of the second protection structure and the via structure, and the second protection structure is electrically connected with the at least one power supply layer.