US 12,237,264 B2
Fusible structures
Shao-Ting Wu, Hsinchu (TW); Meng-Sheng Chang, Hsinchu (TW); Shao-Yu Chou, Hsinchu (TW); and Chung-I Huang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on May 23, 2023, as Appl. No. 18/322,481.
Application 18/322,481 is a continuation of application No. 17/229,345, filed on Apr. 13, 2021, granted, now 11,658,114.
Claims priority of provisional application 63/092,914, filed on Oct. 16, 2020.
Prior Publication US 2023/0298995 A1, Sep. 21, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/525 (2006.01); H10B 20/25 (2023.01); H01L 21/3213 (2006.01)
CPC H01L 23/5256 (2013.01) [H10B 20/25 (2023.02); H01L 21/32139 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A fusible structure comprising:
a metal line in a first metal layer extending along a first direction; and
a first dummy structure disposed proximal to the metal line relative to a second direction, the second direction being perpendicular to the first direction, the first dummy structure being in a second metal layer; and
wherein:
relative to the first direction, the metal line includes first, second and third portions, the second portion being between the first portion and the third portion; and
relative to a third direction that is perpendicular to the first direction and the second direction, the first portion has a first thickness and the second portion has a second thickness, the first thickness being greater than the second thickness.