US 12,237,261 B2
Semiconductor device having a contact structure
Shu-Cheng Chin, Hsinchu (TW); Yao-Min Liu, Hsinchu (TW); Hung-Wen Su, Hsinchu (TW); Chih-Chien Chi, Hsinchu (TW); and Chi-Feng Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on May 4, 2023, as Appl. No. 18/312,181.
Application 18/312,181 is a continuation of application No. 17/187,143, filed on Feb. 26, 2021, granted, now 11,652,044.
Prior Publication US 2023/0275019 A1, Aug. 31, 2023
Int. Cl. H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 23/532 (2006.01)
CPC H01L 23/5226 (2013.01) [H01L 21/76846 (2013.01); H01L 21/7685 (2013.01); H01L 21/76883 (2013.01); H01L 23/5283 (2013.01); H01L 29/41725 (2013.01); H01L 29/456 (2013.01); H01L 21/76807 (2013.01); H01L 23/53209 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an insulating layer, wherein the insulating layer has a via opening and a conductive line opening;
a via in the via opening; and
a conductive line in the conductive line opening, wherein the conductive line comprises:
a first liner layer, wherein a first thickness of the first liner layer over the via is less than a second thickness of the first liner layer over the insulating layer, and
a conductive fill, wherein the first liner layer surrounds the conductive fill.