CPC H01L 23/5225 (2013.01) [H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H03K 19/00346 (2013.01); H04B 15/02 (2013.01); H01L 23/66 (2013.01); H01L 2223/6622 (2013.01); H01L 2223/6672 (2013.01)] | 12 Claims |
1. A semiconductor package comprising:
an integrated circuit device comprising a plurality of conductive pads;
a plurality of package terminals;
a plurality of conductive metal layers separated by insulating layers, wherein the plurality of conductive metal layers comprising signal lines formed in the plurality of conductive metal layers to route signals between the plurality of package terminals and the plurality of conductive pads of the integrated circuit device, wherein:
a first signal line coupled to a first package terminal of the plurality of package terminals;
a second signal line coupled to a second package terminal of the plurality of package terminals, the first signal line and second signal line being adjacent signal lines and conductively isolated;
the first signal line comprises a first electrode structure disposed in a first layer of the plurality of conductive metal layers;
the second signal line comprises a second electrode structure disposed in a second layer of the plurality of conductive metal layers;
the first electrode structure and the second electrode structure are formed opposite each other on the first layer and the second layer, respectively, such that the first electrode structure and the second electrode structure are aligned on a common axis perpendicular to the first layer and the second layer;
a third signal line coupled to a third package terminal of the plurality of package terminals, the third signal line being adjacent to at least one of the first signal line or the second signal line, and the third signal line comprises a third electrode structure disposed in a third layer of the plurality of conductive metal layers; and
the first signal line further comprises a fourth electrode structure disposed in a fourth layer of the plurality of conductive metal layers.
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