US 12,237,244 B2
High density through silicon conductive structures
Jen-Yuan Chang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 7, 2022, as Appl. No. 17/666,469.
Claims priority of provisional application 63/215,340, filed on Jun. 25, 2021.
Prior Publication US 2022/0415757 A1, Dec. 29, 2022
Int. Cl. H01L 21/00 (2006.01); H01L 23/48 (2006.01); H01L 25/065 (2023.01); H01L 23/00 (2006.01)
CPC H01L 23/481 (2013.01) [H01L 25/0657 (2013.01); H01L 24/32 (2013.01); H01L 2224/32145 (2013.01); H01L 2225/06544 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first substrate, comprising:
a first dielectric layer,
a vertical conductive area, wherein the vertical conductive area comprises:
a plurality of vertical conductive structures extending through the first dielectric layer, the plurality of vertical conductive structures comprising a first vertical conductive structure and a second vertical conductive structure, and
a continuous conductive guard ring structure in the first dielectric layer, wherein the continuous conductive guard ring structure comprises a first guard ring portion laterally enclosing the first vertical conductive structure and a second guard ring portion laterally enclosing the second vertical conductive structure, and the first guard ring portion and the second guard ring portion share an overlapping portion; and
a second substrate, comprising:
a first conductor, and
a second conductor,
wherein the first conductor of the second substrate is electrically connected to at least one of the vertical conductive structures of the first substrate.