US 12,237,242 B2
Semiconductor device package comprising a thermal interface material with improved handling properties
Martin Mayer, Nittendorf (DE); Edward Fuergut, Dasing (DE); Alexander Roth, Zeitlarn (DE); and Karina Rott, Munich (DE)
Assigned to Infineon Technologies Austria AG, Villach (AT)
Filed by Infineon Technologies Austria AG, Villach (AT)
Filed on Jul. 6, 2021, as Appl. No. 17/368,311.
Claims priority of application No. 20185063 (EP), filed on Jul. 9, 2020.
Prior Publication US 2022/0013433 A1, Jan. 13, 2022
Int. Cl. H01L 23/42 (2006.01); H01L 23/31 (2006.01); H01L 23/373 (2006.01)
CPC H01L 23/42 (2013.01) [H01L 23/3121 (2013.01); H01L 23/3735 (2013.01); H01L 23/3736 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device package comprising:
an electrically conductive carrier;
a semiconductor die disposed on the carrier;
an encapsulant encapsulating part of the carrier and the semiconductor die;
an electrically insulating and thermally conductive interface structure, covering an exposed surface portion of the carrier and a connected surface portion of the encapsulant;
wherein the interface structure comprises a glass transition temperature in a range between −40° C. to 150° C.,
wherein the interface structure comprises at a temperature of 100° C. a Young's modulus greater than 0.1 Gpa.