US 12,237,239 B2
Semiconductor device and manufacturing method thereof
Jin Young Khim, Seoul (KR); Ji Young Chung, Gyeonggi-do (KR); Ju Hoon Yoon, Gyeonggi-do (KR); Kwang Woong Ahn, Seoul (KR); Ho Jeong Lim, Seoul (KR); Tae Yong Lee, Gyeonggi-do (KR); and Jae Min Bae, Seoul (KR)
Assigned to Amkor Technology Singapore Holding Pte. Ltd., Singapore (SG)
Filed by Amkor Technology Singapore Holding Pte. Ltd., Singapore (SG)
Filed on Dec. 20, 2021, as Appl. No. 17/555,790.
Application 17/555,790 is a continuation of application No. 16/114,589, filed on Aug. 28, 2018, granted, now 11,205,602.
Application 16/114,589 is a continuation of application No. 15/219,511, filed on Jul. 26, 2016, granted, now 10,062,626, issued on Aug. 28, 2018.
Prior Publication US 2022/0293482 A1, Sep. 15, 2022
Int. Cl. H01L 23/31 (2006.01); H01L 21/683 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 25/10 (2006.01)
CPC H01L 23/3128 (2013.01) [H01L 21/6835 (2013.01); H01L 21/6836 (2013.01); H01L 21/76885 (2013.01); H01L 23/481 (2013.01); H01L 23/49811 (2013.01); H01L 23/49838 (2013.01); H01L 24/09 (2013.01); H01L 24/81 (2013.01); H01L 23/49833 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 25/105 (2013.01); H01L 2221/68331 (2013.01); H01L 2221/68363 (2013.01); H01L 2224/05023 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/08238 (2013.01); H01L 2224/13101 (2013.01); H01L 2224/1319 (2013.01); H01L 2224/1329 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/81801 (2013.01); H01L 2224/8185 (2013.01); H01L 2224/81894 (2013.01); H01L 2224/81895 (2013.01); H01L 2224/92125 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1433 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/18161 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate having a top substrate side, a bottom substrate side, and lateral substrate sides extending between the top and bottom substrate sides, the substrate comprising a top side pad, a bottom side pad, and one or more conductive paths that electrically coupled the top side pad to the bottom side pad;
a semiconductor die having a top die side, a bottom die side, and lateral die sides extending between the top and bottom die sides, wherein the bottom die side is coupled to the top substrate side;
a metal pillar having a top pillar end, a bottom pillar end, and a lateral pillar side extending between the top and bottom pillar ends, wherein:
the metal pillar is positioned laterally outside a region of the top substrate side covered by the semiconductor die;
at least a portion of the metal pillar is positioned directly lateral to the semiconductor die;
the bottom pillar end is lower than the bottom die side;
the bottom pillar end is coupled to the top side pad of the substrate with an adhesion member; and
an encapsulating material laterally adjacent the lateral die sides and the lateral pillar side; and
a mold material that directly contacts a widest portion of the lateral pillar side, wherein the mold material directly contacts the encapsulating material.