CPC H01L 22/32 (2013.01) [G01R 1/0416 (2013.01); H01L 23/28 (2013.01); H01L 23/481 (2013.01); H01L 29/157 (2013.01)] | 21 Claims |
1. A method of forming test electrodes for vertical microdevice, the method comprising:
forming a microdevice on a microdevice substrate;
the microdevice having a hidden contact on a surface facing away from the microdevice substrate;
forming a protection layer to cover a part of the hidden contact;
forming a dielectric layer to cover a surface of the microdevice and at least part of the microdevice sidewall, wherein the dielectric layer covers common layers that are on top of the microdevice substrate;
forming an opening to provide access to the hidden contact; and
forming a first electrode to provide access to the hidden contact outside of the microdevice.
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