US 12,237,233 B2
Backside power rail for physical failure analysis (PFA)
Chih-Chao Chou, Hsinchu (TW); Yi-Hsun Chiu, Hsinchu (TW); Shang-Wen Chang, Hsinchu (TW); Ching-Wei Tsai, Hsinchu (TW); and Chih-Hao Wang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 6, 2022, as Appl. No. 17/738,928.
Claims priority of provisional application 63/218,813, filed on Jul. 6, 2021.
Prior Publication US 2023/0009640 A1, Jan. 12, 2023
Int. Cl. H01L 21/66 (2006.01); G01R 31/3183 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01)
CPC H01L 22/12 (2013.01) [G01R 31/318342 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/5286 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a semiconductor device layer including a plurality of diffusion regions, the semiconductor device layer having a first side and a second side opposite the first side;
a first interconnection structure on the first side of the semiconductor device layer, the first interconnection structure including at least one electrical contact; and
a second interconnection structure on the second side of the semiconductor device layer, the second interconnection structure including a plurality of backside power rails, each of the backside power rails at least partially overlapping a respective diffusion region of the plurality of diffusion regions and defining openings which expose portions of the respective diffusion region at the second side of the semiconductor device layer.