US 12,237,229 B2
Shallow trench isolation structures having uniform step heights
I-Sheng Chen, Taipei (TW); Yi-Jing Li, Hsinchu (TW); and Chen-Heng Li, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 25, 2023, as Appl. No. 18/323,764.
Application 18/323,764 is a division of application No. 17/225,249, filed on Apr. 8, 2021, granted, now 11,699,620.
Claims priority of provisional application 63/031,245, filed on May 28, 2020.
Prior Publication US 2023/0298944 A1, Sep. 21, 2023
Int. Cl. H01L 21/8234 (2006.01); H01L 21/311 (2006.01); H01L 21/321 (2006.01); H01L 21/762 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01)
CPC H01L 21/823481 (2013.01) [H01L 21/31116 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a plurality of fins protruding from a substrate and comprising first and second outermost fins and one or more inner fins between the first and second outermost fins, wherein:
the first outermost fin comprises first and second sidewalls opposite to each other;
the second outermost fin comprises third and fourth sidewalls opposite to each other, wherein the second and third sidewalls face each other; and
top surfaces of the first and second outermost fins are aligned on a horizontal plane; and
a shallow trench isolation (STI) material on the substrate, comprising:
a first portion in contact with the first sidewall and comprising a first top surface, wherein a first height is measured from the first top surface to the horizontal plane; and
a second portion between the first outermost fin and an adjacent inner fin of the one or more inner fins and comprising a second top surface, wherein a second height is measured from the second top surface to the horizontal plane and the second height is greater than the first height.