US 12,237,228 B2
Semiconductor device and method
Shao-Jyun Wu, New Taipei (TW); Hung-Chi Wu, Hsinchu (TW); Chia-Ching Lee, New Taipei (TW); Pin-Hsuan Yeh, Taipei (TW); Hung-Chin Chung, Pingzhen (TW); Hsien-Ming Lee, Changhua (TW); Chien-Hao Chen, Chuangwei Township (TW); Sheng-Liang Pan, Hsinchu (TW); and Huan-Just Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 30, 2023, as Appl. No. 18/345,148.
Application 18/345,148 is a continuation of application No. 17/391,220, filed on Aug. 2, 2021, granted, now 11,735,481.
Application 17/391,220 is a continuation of application No. 16/568,518, filed on Sep. 12, 2019, granted, now 11,081,396, issued on Aug. 3, 2021.
Prior Publication US 2023/0343648 A1, Oct. 26, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/823431 (2013.01) [H01L 21/0234 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a semiconductor fin extending from a substrate;
depositing a dielectric layer over the semiconductor fin;
depositing a work function layer over the dielectric layer;
generating a plasma, wherein the plasma is free of charged species; and
exposing the work function layer to the plasma.