US 12,237,225 B2
Method for manufacturing semiconductor device
Hiroki Miyake, Nisshin (JP); and Tatsuji Nagaoka, Nisshin (JP)
Assigned to DENSO CORPORATION, Kariya (JP); TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP); and MIRISE Technologies Corporation, Nisshin (JP)
Filed by DENSO CORPORATION, Kariya (JP); TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP); and MIRISE Technologies Corporation, Nisshin (JP)
Filed on Jan. 25, 2022, as Appl. No. 17/583,754.
Claims priority of application No. 2021-016099 (JP), filed on Feb. 3, 2021.
Prior Publication US 2022/0246474 A1, Aug. 4, 2022
Int. Cl. H01L 21/78 (2006.01); H01L 21/425 (2006.01); H01L 21/46 (2006.01); H01L 21/461 (2006.01); H01L 21/479 (2006.01); H01L 29/04 (2006.01)
CPC H01L 21/78 (2013.01) [H01L 21/425 (2013.01); H01L 21/46 (2013.01); H01L 21/461 (2013.01); H01L 21/479 (2013.01); H01L 29/045 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, comprising:
preparing a substrate made of a compound semiconductor containing a first element and a second element that is bonded to the first element and has an electronegativity smaller than that of the first element by 1.5 or more;
causing an electric current to flow in the substrate from a front surface through the substrate to a back surface in a thickness direction of the substrate or from the back surface through the substrate to the front surface in the thickness direction; and
dividing the substrate at a position including a current region where the electric current is caused to flow and along a cleavage plane of the substrate.