US 12,237,222 B2
Method for manufacturing semiconductor device and same
Fan Pan, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jul. 18, 2022, as Appl. No. 17/866,688.
Application 17/866,688 is a continuation of application No. PCT/CN2021/136489, filed on Dec. 8, 2021.
Claims priority of application No. 202111266168.3 (CN), filed on Oct. 28, 2021.
Prior Publication US 2023/0134285 A1, May 4, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H10B 12/00 (2023.01)
CPC H01L 21/76883 (2013.01) [H01L 21/76898 (2013.01); H01L 23/5283 (2013.01); H01L 23/53271 (2013.01); H10B 12/482 (2023.02); H10B 12/485 (2023.02); H10B 12/488 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, comprising:
providing a substrate having at least one trench;
forming a first polysilicon layer in the trench, covering a sidewall and a bottom of the trench, and not fully fills the trench;
annealing the first polysilicon layer; and
forming a second polysilicon layer at a region of the trench where the first polysilicon layer is not filled after annealing;
wherein
forming the first polysilicon layer, annealing and forming the second polysilicon layer are completed in a same process.