US 12,237,219 B2
Contact with bronze material to mitigate undercut
Nazila Dadvand, Richardson, TX (US); Christopher Daniel Manack, Flower Mound, TX (US); and Salvatore Frank Pavone, Murphy, TX (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by Texas Instruments Incorporated, Dallas, TX (US)
Filed on Sep. 30, 2020, as Appl. No. 17/038,947.
Application 17/038,947 is a division of application No. 16/022,956, filed on Jun. 29, 2018, granted, now 10,796,956.
Prior Publication US 2021/0028060 A1, Jan. 28, 2021
Int. Cl. H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76873 (2013.01) [H01L 23/53238 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/49 (2013.01); H01L 2224/13157 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
an electronic component disposed on or in a semiconductor substrate of a wafer or die;
a metallization structure, including a conductive feature; and
a contact structure, including:
a barrier layer disposed at least partially on the conductive feature,
a copper structure that extends at least partially outward from a side of the metallization structure, and
a bronze material disposed between the barrier layer and the copper structure.