US 12,237,218 B2
Method of fabricating contact structure
Chang-Ting Chung, Taipei (TW); Shih-Wei Yeh, Hsinchu (TW); Kai-Chieh Yang, New Taipei (TW); Yu-Ting Wen, Taichung (TW); Yu-Chen Ko, Chiayi (TW); Ya-Yi Cheng, Taichung (TW); Min-Hsiu Hung, Tainan (TW); Chun-Hsien Huang, Hsinchu (TW); Wei-Jung Lin, Hsinchu (TW); Chih-Wei Chang, Hsinchu (TW); and Ming-Hsing Tsai, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 6, 2022, as Appl. No. 17/738,009.
Prior Publication US 2023/0360969 A1, Nov. 9, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 21/3213 (2006.01); H01L 29/40 (2006.01); H01L 29/45 (2006.01); H10B 10/00 (2023.01)
CPC H01L 21/76865 (2013.01) [H01L 21/32133 (2013.01); H01L 21/32138 (2013.01); H01L 21/76846 (2013.01); H01L 21/76877 (2013.01); H01L 29/401 (2013.01); H10B 10/12 (2023.02); H01L 29/456 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method of fabricating a contact structure, comprising:
forming an opening in a dielectric layer;
forming a conductive material layer within the opening and on the dielectric layer, wherein the conductive material layer comprises a bottom section having a first thickness and a top section having a second thickness, the second thickness is greater than the first thickness;
performing a first treatment on the conductive material layer to form a first oxide layer on the bottom section and on the top section of the conductive material layer; and
performing a second treatment to remove at least portions of the first oxide layer and at least portions of the conductive material layer, wherein after performing the second treatment, the bottom section and the top section of the conductive material layer have substantially equal thickness.