	US 12,237,216 B2
	Method for filling recessed features in semiconductor devices with a low-resistivity metal
Kai-Hung Yu, Albany, NY (US); Shihsheng Chang, Albany, NY (US); Ying Trickett, Albany, NY (US); Eric Chih-Fang Liu, Albany, NY (US); Yun Han, Albany, NY (US); Henan Zhang, Albany, NY (US); Cory Wajda, Albany, NY (US); Robert D. Clark, Albany, NY (US); Gerrit J. Leusink, Albany, NY (US); Gyanaranjan Pattanaik, Albany, NY (US); and Hiroaki Niimi, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Mar. 7, 2022, as Appl. No. 17/688,343.
Claims priority of provisional application 63/161,909, filed on Mar. 16, 2021.
Prior Publication US 2022/0301930 A1, Sep. 22, 2022
Int. Cl. H01L 21/768 (2006.01)

CPC H01L 21/76846 (2013.01) [H01L 21/76826 (2013.01); H01L 21/76871 (2013.01); H01L 21/76879 (2013.01)]

21 Claims

1. A method of forming a semiconductor device, the method comprising:

providing a patterned substrate containing a recessed feature formed in a first layer and a second layer that is exposed in the recessed feature;

forming a nucleation enhancement layer on a sidewall of the first layer in the recessed feature but not on the second layer, wherein forming the nucleation enhancement layer includes forming a nucleation blocking layer on the sidewall, and converting the nucleation blocking layer into the nucleation enhancement layer; and

depositing a metal layer in the recessed feature by vapor phase deposition, wherein the metal layer is deposited on the second layer and on the nucleation enhancement layer, wherein forming the nucleation enhancement layer comprises:

exposing the patterned substrate to a reactant gas that forms the nucleation blocking layer on the sidewall;

treating the patterned substrate with a plasma-excited H₂gas that modifies the nucleation blocking layer; and

adding hydroxyl groups to the modified nucleation blocking layer.