	US 12,237,215 B2
	Semiconductor structure and method for manufacturing same
Ming Cheng, Hefei (CN); Xing Jin, Hefei (CN); and Ran Li, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Oct. 19, 2021, as Appl. No. 17/451,456.
Application 17/451,456 is a continuation of application No. PCT/CN2021/103851, filed on Jun. 30, 2021.
Claims priority of application No. 202010988672.3 (CN), filed on Sep. 18, 2020.
Prior Publication US 2022/0093449 A1, Mar. 24, 2022
Int. Cl. H01L 23/532 (2006.01); H01L 21/768 (2006.01); H10B 12/00 (2023.01)

CPC H01L 21/7682 (2013.01) [H10B 12/315 (2023.02); H10B 12/482 (2023.02)]

13 Claims

1. A semiconductor structure, comprising:

a substrate, bit line structures located on the substrate, and capacitor contact holes located on each of two opposite sides of the bit line structure;

isolation side walls, each of which is located between a respective bit line structure and the capacitor contact holes on one side of the bit line structure, wherein a gap isolation layer is provided between the isolation side walls located on two opposite sides of the bit line structure; the gap isolation layer is located on the bit line structure, and a first gap is provided inside the gap isolation layer; and a second gap is provided between one of the isolation side walls and the gap isolation layer; wherein

a top surface of the gap isolation layer is lower than a top surface of the isolation side wall.

6. A method for manufacturing a semiconductor structure, comprising:

providing a substrate and bit line structures located on the substrate, wherein each of the bit line structures comprises a top dielectric layer, and is provided with capacitor contact holes in each of two opposite sides of the bit line structure;

forming a sacrificial side wall covering a side wall of the top dielectric layer;

removing at least part of the top dielectric layer to form a first gap;

performing a deposition process to form a gap isolation layer with the first gap; and

forming an isolation side wall covering the sacrificial side wall, and removing at least part of the sacrificial side wall to form a second gap located between the isolation side wall and the gap isolation layer;

wherein

a top surface of the gap isolation layer is lower than a top surface of the isolation side wall;

and

after the second gap is formed, a second sealing layer that blocks a top opening of the second gap is formed; and the second sealing layer covers the top surface of the gap isolation layer.