US 12,237,172 B2
Etch process for oxide of alkaline earth metal
Du Zhang, Albany, NY (US); Christophe Vallee, Albany, NY (US); and Mingmei Wang, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on May 17, 2022, as Appl. No. 17/746,406.
Prior Publication US 2023/0374670 A1, Nov. 23, 2023
Int. Cl. H01L 21/3065 (2006.01); C23F 1/12 (2006.01); C23G 5/00 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01)
CPC H01L 21/3065 (2013.01) [C23F 1/12 (2013.01); C23G 5/00 (2013.01); H01L 21/311 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/32136 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of processing a substrate, the method comprising:
loading the substrate in a plasma processing chamber, the substrate having a surface comprising barium titanate (BaTiO3) or barium stannate (BaSnO3);
flowing a process gas comprising CCl4 and a bromine-containing gas into the plasma processing chamber;
in the plasma processing chamber, forming a fluorine-free plasma from the process gas by applying a source power to a source electrode of the plasma processing chamber, wherein the plasma is hydrogen-free; and
exposing the substrate to the hydrogen-free and fluorine-free plasma to etch the BaTiO3 or BaSnO3.