US 12,237,170 B2
Haloalkynyl dicobalt hexacarbonyl precursors for chemical vapor deposition of cobalt
Sangbum Han, Norfolk, VA (US); Seobong Chang, Suwon (KR); Bryan C. Hendrix, Danbury, CT (US); Jaeeon Park, HwaSung (KR); and Thomas H. Baum, New Fairfield, CT (US)
Assigned to ENTEGRIS, INC., Billerica, MA (US)
Filed by ENTEGRIS, INC., Billerica, MA (US)
Filed on Sep. 28, 2023, as Appl. No. 18/374,637.
Application 18/374,637 is a continuation of application No. 16/952,985, filed on Nov. 19, 2020, granted, now 11,804,375.
Application 16/952,985 is a continuation of application No. 15/819,620, filed on Nov. 21, 2017, granted, now 10,872,770, issued on Dec. 22, 2020.
Claims priority of provisional application 62/425,807, filed on Nov. 23, 2016.
Prior Publication US 2024/0096631 A1, Mar. 21, 2024
Int. Cl. H01L 21/285 (2006.01); C07F 15/06 (2006.01); C23C 16/06 (2006.01); C23C 16/16 (2006.01); C23C 16/18 (2006.01)
CPC H01L 21/28556 (2013.01) [C07F 15/06 (2013.01); C23C 16/06 (2013.01); C23C 16/16 (2013.01); C23C 16/18 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A precursor or precursor composition for a vapor deposition process of a cobalt film, the precursor or precursor composition comprising:
a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of formula Co2(CO)6(R3C≡CR4), wherein R3 is a hydrogen and R4 is a —C2F5 or —C6F5,
where the precursor or precursor composition has a viscosity between about 1 centipoise to about 40 centipoise.