US 12,237,167 B2
Deposition method
Ken Okoshi, Yamanashi (JP); Yamato Tonegawa, Yamanashi (JP); and Keiji Tabuki, Yamanashi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jan. 20, 2022, as Appl. No. 17/648,438.
Claims priority of application No. 2021-017307 (JP), filed on Feb. 5, 2021.
Prior Publication US 2022/0254629 A1, Aug. 11, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/458 (2006.01)
CPC H01L 21/02219 (2013.01) [C23C 16/345 (2013.01); C23C 16/4584 (2013.01); H01L 21/0217 (2013.01); H01L 21/02271 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A method of depositing a silicon nitride film on a surface of a substrate, the method comprising:
(a) supplying trisilylamine into a processing chamber accommodating the substrate;
(b) supplying an inert gas into the processing chamber; and
(c) alternately performing (a) and (b) to deposit the silicon nitride film on the surface of the substrate,
wherein (c) is performed without plasma while H is removed from the trisilylamine by breaking a Si-H bond of the trisilylamine.