US 12,237,164 B2
Method of manufacturing electrode plate for plasma processing device and electrode plate for plasma processing device
Koji Higashi, Sanda (JP)
Assigned to MITSUBISHI MATERIALS CORPORATION, Tokyo (JP)
Appl. No. 17/800,602
Filed by MITSUBISHI MATERIALS CORPORATION, Tokyo (JP)
PCT Filed Jan. 5, 2021, PCT No. PCT/JP2021/000074
§ 371(c)(1), (2) Date Aug. 18, 2022,
PCT Pub. No. WO2021/192481, PCT Pub. Date Sep. 30, 2021.
Claims priority of application No. 2020-053222 (JP), filed on Mar. 24, 2020.
Prior Publication US 2023/0077433 A1, Mar. 16, 2023
Int. Cl. H01J 9/02 (2006.01); H01J 37/32 (2006.01)
CPC H01J 9/02 (2013.01) [H01J 37/32541 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of manufacturing an electrode plate for a plasma processing apparatus for forming a plurality of gas holes having a straight portion exceeding 12 mm in length in a thickness direction of an electrode plate main body in a penetrating state and in parallel to each other, the method comprising:
a prepared hole forming step of forming a prepared hole with a diameter of 50% or more and 80% or less of a diameter of a hole forming the straight portion with a first drill from one surface of the electrode plate main body; and
a straight portion forming step of forming the straight portion to overlap the prepared hole with a second drill,
wherein the electrode plate main body consists of single crystal silicon, columnar crystal silicon, or polycrystalline silicon,
a diameter of the second drill is larger than a diameter of the first drill, and
the straight portion forming step is conducted after the prepared hole forming step.