CPC H01J 49/422 (2013.01) [H01J 49/16 (2013.01); H01J 49/24 (2013.01); H01J 49/42 (2013.01)] | 14 Claims |
1. An ion-trap system comprising:
an ion trap disposed on a chip carrier; and
an enclosure that encloses the ion trap in a first chamber, wherein the enclosure includes a plurality of piece parts that includes the chip carrier and a housing, and wherein the piece parts of the plurality thereof are joined with a plurality of seals that consists of UHV seals;
wherein the first chamber has a pressure that is less than or equal to 10−10 Torr;
wherein the first chamber has an internal volume that is less than or equal to 10 cm3; and
wherein the ion-trap system has an operating temperature that is greater than or equal to −50° C.
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8. An ion-trap system comprising:
an ion trap disposed on a chip carrier; and
an enclosure that encloses the ion trap in a first chamber, wherein the enclosure includes a plurality of piece parts comprising the chip carrier and a housing;
a plurality of seals that consists of UHV seals, wherein plurality of seals join the piece parts of the plurality thereof; and
an ion pump that is joined with the enclosure via a first UHV seal;
wherein the first chamber has a pressure that is less than or equal to 10-10 Torr;
wherein the ion-trap system is cryosorption-pump-free; and
wherein the ion-trap system is configured to enable an operating temperature that is greater than or equal to −50° C.
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