US 12,237,159 B2
Deposition apparatus, deposition target structure, and method
Chia-Hsi Wang, Hsinchu (TW); and Yen-Yu Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Sep. 22, 2023, as Appl. No. 18/472,556.
Application 18/472,556 is a continuation of application No. 17/461,742, filed on Aug. 30, 2021, granted, now 11,823,878.
Prior Publication US 2024/0014019 A1, Jan. 11, 2024
Int. Cl. H01J 37/34 (2006.01); C23C 14/34 (2006.01); H01L 21/033 (2006.01)
CPC H01J 37/3417 (2013.01) [C23C 14/3407 (2013.01); C23C 14/3414 (2013.01); H01J 37/3423 (2013.01); H01L 21/0337 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A deposition apparatus, comprising:
a process chamber;
a wafer support in the process chamber;
a backplane structure having a first surface in the process chamber facing the wafer support, the backplane structure having a first machine lock pattern including a plurality of first peaks and a plurality of first valleys;
a target having a second surface facing the first surface and a third surface facing the wafer support, the target having a second machine lock pattern including a plurality of second peaks and a plurality of second valleys; and
an adhesion structure in physical contact with the backplane structure and the target, comprising:
an adhesion material layer; and
a spacer embedded in the adhesion material layer;
wherein a first surface of the adhesion material layer has shape corresponding to the plurality of first peaks and the plurality of first valleys, and a second surface of the adhesion material layer has shape corresponding to the plurality of second peaks and the plurality of second valleys,
wherein the first machine lock pattern includes a plurality of grooves that align with the spacer, each of the plurality of grooves being deeper than the plurality of first valleys.