| CPC H01J 37/3299 (2013.01) [H01J 37/32926 (2013.01); H01L 22/26 (2013.01); H01J 2237/332 (2013.01); H01J 2237/3341 (2013.01)] | 14 Claims |
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1. A substrate processing system comprising:
an etch chamber configured to perform an etch process on a substrate, wherein the etch chamber comprises an optical sensor to generate one or more optical measurements of a film on the substrate at least one of during the etch process or after the etch process; and
a computing device operatively connected to the etch chamber, wherein the computing device is to:
receive the one or more optical measurements of the film;
determine, for each optical measurement of the one or more optical measurements, a film thickness of the film;
determine an etch rate of the film based on the one or more optical measurements using the determined film thickness of each optical measurement of the one or more optical measurements;
input the etch rate into a trained machine learning model, wherein the trained machine learning model outputs an estimated process parameter value of at least one process parameter for a previously performed process that was performed on the substrate prior to the etch process by a process chamber;
determine that the estimated process parameter value of the at least one process parameter provided by the process chamber for the previously performed process had a deviation from a target process parameter value of the at least one process parameter; and
adjust an operation of the process chamber by correcting the deviation between the estimated process parameter value and the target process parameter value for future execution of the previously performed process on the process chamber.
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