	US 12,237,153 B2
	Forming method of plasma resistant oxyfluoride coating layer
Sung min Lee, Seoul (KR); and Yoon Suk Oh, Seoul (KR)
Assigned to KOREA INSTITUTE OF CERAMIC ENGINEERING AND TECHNOLOGY, Jinju-si (KR)
Filed by KOREA INSTITUTE OF CERAMIC ENGINEERING AND TECHNOLOGY, Jinju-si (KR)
Filed on Nov. 1, 2022, as Appl. No. 17/978,778.
Claims priority of application No. 10-2022-0000695 (KR), filed on Jan. 4, 2022.
Prior Publication US 2023/0215701 A1, Jul. 6, 2023
Int. Cl. H01J 37/32 (2006.01); C23C 14/06 (2006.01); C23C 14/08 (2006.01); C23C 14/24 (2006.01); C23C 14/26 (2006.01); C23C 14/30 (2006.01); C23C 14/50 (2006.01); H01J 37/147 (2006.01); H01J 37/06 (2006.01)

CPC H01J 37/32477 (2013.01) [C23C 14/0694 (2013.01); C23C 14/083 (2013.01); C23C 14/243 (2013.01); C23C 14/26 (2013.01); C23C 14/30 (2013.01); C23C 14/505 (2013.01); H01J 37/1474 (2013.01); H01J 37/06 (2013.01); H01J 2237/182 (2013.01); H01J 2237/3128 (2013.01); H01J 2237/3132 (2013.01)]

12 Claims

1. A method of forming a plasma resistant oxyfluoride coating layer, comprising:

mounting a substrate on a substrate holder provided in a chamber;

causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source;

vaporizing a fluoride accommodated in a second crucible; and

advancing an evaporation gas generated from the oxide evaporation source and a fluorine-containing gas generated from the fluoride toward the substrate, and reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate,

wherein the fluoride comprises one or more solid materials selected from the group consisting of NH₄F and NH₅F₂to be evaporated without additional heating.