US 12,237,151 B2
Apparatus and method for processing substrate using plasma
Seong Gil Lee, Gyeonggi-do (KR); Young Je Um, Busan (KR); Myoung Sub Noh, Gyeonggi-do (KR); Dong Sub Oh, Busan (KR); Min Sung Han, Gyeonggi-do (KR); Dong Hun Kim, Seoul (KR); and Wan Jae Park, Gyeonggi-do (KR)
Assigned to SEMES CO, LTD., Chungcheongnam-do (KR)
Filed by SEMES CO., LTD., Chungcheongnam-do (KR)
Filed on Aug. 11, 2022, as Appl. No. 17/885,543.
Claims priority of application No. 10-2021-0182227 (KR), filed on Dec. 17, 2021.
Prior Publication US 2023/0197412 A1, Jun. 22, 2023
Int. Cl. H01J 37/32 (2006.01); B08B 7/00 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01)
CPC H01J 37/32422 (2013.01) [B08B 7/0035 (2013.01); H01J 37/32449 (2013.01); H01J 2237/3346 (2013.01); H01J 2237/335 (2013.01); H01L 21/02057 (2013.01); H01L 21/3065 (2013.01)] 13 Claims
OG exemplary drawing
 
1. An apparatus for processing a substrate comprising: a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel; and a second coating layer containing nickel, wherein the ion blocker has a third surface facing the second space, the third surface has one portion on which the second coating layer is formed and another portion on which the second coating layer is not formed.