US 12,237,112 B2
Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic device comprising conductive material and ferroelectric material
Manuj Nahar, Boise, ID (US); and Ashonita A. Chavan, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Sep. 21, 2022, as Appl. No. 17/950,023.
Application 17/950,023 is a division of application No. 17/183,285, filed on Feb. 23, 2021, granted, now 11,469,043.
Application 17/183,285 is a division of application No. 15/691,541, filed on Aug. 30, 2017, granted, now 10,950,384, issued on Mar. 16, 2021.
Prior Publication US 2023/0015304 A1, Jan. 19, 2023
Int. Cl. H01G 4/12 (2006.01); H01G 4/10 (2006.01); H01G 4/30 (2006.01); H01G 4/33 (2006.01); H01G 4/40 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 49/02 (2006.01); H10B 51/30 (2023.01); H10B 53/30 (2023.01)
CPC H01G 4/10 (2013.01) [H01G 4/30 (2013.01); H01G 4/33 (2013.01); H01L 28/55 (2013.01); H01L 29/40111 (2019.08); H01L 29/516 (2013.01); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09); H10B 51/30 (2023.02); H10B 53/30 (2023.02); H01G 4/12 (2013.01); H01G 4/40 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A ferroelectric capacitor, comprising:
two conductive capacitor electrodes having a ferroelectric composite stack there-between, the ferroelectric composite stack comprising multiple metal oxide-comprising insulator materials, at least one of the multiple metal oxide-comprising insulator materials comprising one or more members of the group consisting of lead zirconium titanate, tantalum oxide, strontium oxide, strontium titanate oxide, titanium oxide and barium strontium titanate, at least one of the multiple metal oxide-comprising insulator materials being ferroelectric and being disposed between and directly against non-ferroelectric insulating materials.